Molecular layer epitaxy.
نویسندگان
چکیده
منابع مشابه
Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer ...
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A thermal cracker enhanced gas source molecular beam epitaxy system was used to synthesize large-area graphene. Hydrocarbon gas molecules were broken by thermal cracker at very high temperature of 1200 C and then impinged on a nickel substrate. High-quality, large-area graphene films were achieved at 800 C, and this was confirmed by both Raman spectroscopy and transmission electron microscopy. ...
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ژورنال
عنوان ژورنال: Nihon Kessho Gakkaishi
سال: 1986
ISSN: 0369-4585,1884-5576
DOI: 10.5940/jcrsj.28.133